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Power Conversion Solutions with ElecSuper 2N7002KD MOSFET Featuring Low Gate Charge and High Voltage

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Power Conversion Solutions with ElecSuper 2N7002KD MOSFET Featuring Low Gate Charge and High Voltage

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 300mA

Operating Temperature - : -55℃~+150℃

RDS(on) : 1.85Ω@10V;2.05Ω@4.5V

Gate Threshold Voltage (Vgs(th)) : 1.6V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 4pF

Number : 2 N-Channel

Output Capacitance(Coss) : 11pF

Input Capacitance(Ciss) : 28pF

Pd - Power Dissipation : 350mW

Gate Charge(Qg) : 1.8nC@4.5V

Description : N-Channel Array 60V 300mA 350mW Surface Mount SOT-363

Mfr. Part # : 2N7002KD

Model Number : 2N7002KD

Package : SOT-363

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Product Overview

The 2N7002KD is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering features like 60V BVDSS, low RDS(on), ESD protection, and being Halogen free.

Product Attributes

Brand: SuperMOS (ElecSuper)
Origin: Not specified
Material: Halogen free
Color: Not specified
Certifications: UL 94V-0

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings & Thermal Characteristics
Drain-Source Voltage	BVDSS				60	V
Gate-Source Voltage	VGS			±20		V
Continuous Drain Current	ID	TA=25			0.3	A
Continuous Drain Current	ID	TA=100			0.2	A
Maximum Power Dissipation	PD				350	mW
Pulsed Drain Current	IDM				1.2	A
Operating Junction Temperature	TJ				150	°C
Lead Temperature	TL				260	°C
Storage Temperature Range	Tstg		-55		150	°C
Junction-to-Ambient Thermal Resistance	RθJA	Single Operation		357		°C/W
Electrical Characteristics
Drain-to-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250uA	60			V
Zero Gate Voltage Drain Current	IDSS	VDS=60V, VGS=0V			1.0	uA
Gate-to-source Leakage Current	IGSS	VDS=0V, VGS=±20V			±10	uA
Gate Threshold Voltage	VGS(TH)	VGS=VDS, ID=250uA	1.0	1.6	2.0	V
Drain-to-source On-resistance	RDS(on)	VGS=10V, ID=0.3A		1.85	2.2	Ω
Drain-to-source On-resistance	RDS(on)	VGS=4.5V, ID=0.2A		2.05	3.0	Ω
Input Capacitance	CISS	VGS=0V, f=1MHz, VDS=25V		28		pF
Output Capacitance	COSS			11		pF
Reverse Transfer Capacitance	CRSS			4		pF
Total Gate Charge	QG(TOT)	VGS=4.5V, VDS=10V, ID=0.3A		1.8		nC
Gate-to-Source Charge	QGS			0.3
Gate-to-Drain Charge	QGD			0.6
Turn-On Delay Time	td(ON)	VGS=10V, VDS=10V, ID=0.2A, RG=10Ω		2		ns
Rise Time	tr			15
Turn-Off Delay Time	td(OFF)			7
Fall Time	tf			20
Forward Voltage	VSD	VGS=0V, IS=0.3A		1.5		V

2504101957_ElecSuper-2N7002KD_C5224250.pdf

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