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Power Switching Solutions Featuring ElecSuper ES2N7002SWT1G N Channel MOSFET with Trench Technology

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Power Switching Solutions Featuring ElecSuper ES2N7002SWT1G N Channel MOSFET with Trench Technology

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 220mA

RDS(on) : 1.9Ω@10V,200mA

Gate Threshold Voltage (Vgs(th)) : 1.5V@250uA

Reverse Transfer Capacitance (Crss@Vds) : 8pF@10V

Input Capacitance(Ciss) : 45pF@10V

Pd - Power Dissipation : 225mW

Gate Charge(Qg) : 2nC@10V

Description : 60V 220mA 225mW Surface Mount SOT-323

Mfr. Part # : ES2N7002SWT1G

Model Number : ES2N7002SWT1G

Package : SOT-323

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Product Overview

The ES2N7002SWT1G is an N-Channel enhancement mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and halogen-free.

Product Attributes

Brand: ElecSuper
Part Number: ES2N7002SWT1G
Package: SOT-323
Material: Halogen free
Certifications: UL 94V-0
Flammability Rating: UL 94V-0
ESD Protection (HBM): 2kV

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Drain-Source Voltage	BVDSS				60	V
Gate-Source Voltage	VGS			±20		V
Continuous Drain Current	ID	TA=25			0.3	A
Continuous Drain Current	ID	TA=100			0.2	A
Maximum Power Dissipation	PD				350	mW
Pulsed Drain Current	IDM				1.2	A
Operating Junction Temperature	TJ				150	°C
Lead Temperature	TL				260	°C
Storage Temperature Range	Tstg		-55		150	°C
Electrical Characteristics
Drain-to-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250uA	60			V
Zero Gate Voltage Drain Current	IDSS	VDS=60V, VGS=0V			1.0	uA
Gate-to-source Leakage Current	IGSS	VDS=0V, VGS=±20V		±10		uA
Gate Threshold Voltage	VGS(TH)	VGS=VDS, ID=250uA	1.0	1.6	2.0	V
Drain-to-source On-resistance	RDS(on)	VGS=10V, ID=0.3A		1.85	2.2	Ω
Drain-to-source On-resistance	RDS(on)	VGS=4.5V, ID=0.2A		2.05	3.0	Ω
Input Capacitance	CISS	VGS=0V, f=1MHz, VDS=25V		28		pF
Output Capacitance	COSS	VGS=0V, f=1MHz, VDS=25V		11		pF
Reverse Transfer Capacitance	CRSS	VGS=0V, f=1MHz, VDS=25V		4		pF
Total Gate Charge	QG(TOT)	VGS=4.5V, VDS=10V, ID=0.3A		1.8		nC
Gate-to-Source Charge	QGS	VGS=4.5V, VDS=10V, ID=0.3A		0.3		nC
Gate-to-Drain Charge	QGD	VGS=4.5V, VDS=10V, ID=0.3A		0.6		nC
Turn-On Delay Time	td(ON)	VGS=10V, VDS=10V, ID=0.2A, RG=10Ω		2		ns
Rise Time	tr	VGS=10V, VDS=10V, ID=0.2A, RG=10Ω		15		ns
Turn-Off Delay Time	td(OFF)	VGS=10V, VDS=10V, ID=0.2A, RG=10Ω		7		ns
Fall Time	tf	VGS=10V, VDS=10V, ID=0.2A, RG=10Ω		20		ns
Forward Voltage	VSD	VGS=0V, IS=0.3A		1.5		V

2504101957_ElecSuper-ES2N7002SWT1G_C42420871.pdf

Quality Power Switching Solutions Featuring ElecSuper ES2N7002SWT1G N Channel MOSFET with Trench Technology for sale

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