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Operating Temperature - : -40℃~+125℃
Description : Low Side High Side Gate Driver IC MOSFET IGBT SOP-8
Mfr. Part # : BDR6301
Model Number : BDR6301
Package : SOP-8
The BDR6301 is a high-voltage, high-power gate driver IC specifically designed for driving MOSFETs and IGBTs. It integrates logic signal input processing, dead-time control, undervoltage lockout, latching, level shifting, pulse filtering, and output drive circuits. This chip is ideal for use in the driver circuits of brushless motor controllers. It features a high-side working voltage of up to 220V and a wide low-side VCC supply voltage range of 11V to 20V, with a low static power consumption of approximately 100uA. The BDR6301 includes a latch function to prevent simultaneous conduction of output power tubes. The HIN input has an integrated 250K pull-down resistor, and the LIN input has a 300k pull-up resistor, ensuring both upper and lower power MOSFETs remain off when inputs are floating. The output offers 1A source and 1.5A sink current capabilities and comes in an SOP8 package.
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Unless otherwise specified, TA=25) | ||||||
| Bootstrap High-side VB Supply | VB | - | -0.3 | - | 220 | V |
| High-side Floating Ground | VS | - | VB-25 | - | VB+0.3 | V |
| High-side Output | HO | - | VS-0.3 | - | VB+0.3 | V |
| Low-side Output | LO | - | -0.3 | - | VCC+0.3 | V |
| Supply Voltage | VCC | - | -0.3 | - | 25 | V |
| High-side Logic Signal Input | HIN | - | -0.3 | - | VCC+0.3 | V |
| Low-side Logic Signal Input | LIN | - | -0.3 | - | VCC+0.3 | V |
| Ambient Temperature | TA | - | -40 | - | 125 | |
| Storage Temperature | Tstr | - | -55 | - | 150 | |
| Soldering Temperature | TL | - | - | - | 300 | |
| Typical Characteristics (Unless otherwise specified, TA=25, VCC=15V, CL=10nF) | ||||||
| Supply Voltage | Vcc | - | 11 | 15 | 20 | V |
| Quiescent Current | Icc | Inputs floating, VCC=15V | - | 95 | - | uA |
| Logic High Input Voltage | Vin(H) | All logic inputs | 2.5 | - | - | V |
| Logic Low Input Voltage | Vin(L) | All logic inputs | -0.3 | 0 | 1.5 | V |
| Logic High Input Current | Iin(H) | Vin=5V | - | - | 20 | uA |
| Logic Low Input Current | Iin(L) | Vin=0V | -20 | - | - | uA |
| VCC Supply Undervoltage Lockout | ||||||
| VCC Turn-on Voltage | Vcc(on) | - | 8.4 | 9.4 | 10.4 | V |
| VCC Turn-off Voltage | Vcc(off) | - | 7.8 | 8.8 | 9.8 | V |
| VB Supply Undervoltage Lockout | ||||||
| VB Turn-on Voltage | VB(on) | - | 7.7 | 8.7 | 9.7 | V |
| VB Turn-off Voltage | VB(off) | - | 7.2 | 8.2 | 9.2 | V |
| Low-side Output LO Switching Time Characteristics | ||||||
| Turn-on Delay | Ton | See Figure 3 | - | 350 | 500 | nS |
| Turn-off Delay | Toff | See Figure 3 | - | 150 | 250 | nS |
| Rise Time | Tr | See Figure 3 | - | 180 | 300 | nS |
| Fall Time | Tf | See Figure 3 | - | 70 | 150 | nS |
| High-side Output HO Switching Time Characteristics | ||||||
| Turn-on Delay | Ton | See Figure 4 | - | 350 | 500 | nS |
| Turn-off Delay | Toff | See Figure 4 | - | 150 | 250 | nS |
| Rise Time | Tr | See Figure 4 | - | 180 | 300 | nS |
| Fall Time | Tf | See Figure 4 | - | 70 | 150 | nS |
| Dead Time Characteristics | ||||||
| Dead Time | DT | See Figure 5, CL=0 | 100 | 200 | 300 | nS |
| IO Output Maximum Drive Capability | ||||||
| IO Source Current | IO+ | Vo=0V, VIN=VIH, PW10uS | - | 1 | - | A |
| IO Sink Current | IO- | Vo=12V, VIN=VIL, PW10uS | - | 1.5 | - | A |
| Pin No. | Pin Name | I/O | Description |
|---|---|---|---|
| 1 | VCC | Power | Chip operating power supply input. Voltage range 11V-20V. An external 0.1uF high-frequency bypass capacitor can reduce high-frequency noise at the chip's input. |
| 2 | HIN | I | Logic input control signal, high level effective. Controls the turn-on and turn-off of the high-side power MOSFET. '0' turns off the power MOSFET, '1' turns on the power MOSFET. |
| 3 | LIN | I | Logic input control signal, low level effective. Controls the turn-on and turn-off of the low-side power MOSFET. '1' turns off the power MOSFET, '0' turns on the power MOSFET. |
| 4 | GND | GND | Chip ground terminal. |
| 5 | LO | O | Output controls the turn-on and turn-off of the low-side power MOSFET. |
| 6 | VS | O | High-side floating ground terminal. |
| 7 | HO | O | Output controls the turn-on and turn-off of the high-side power MOSFET. |
| 8 | VB | Power | High-side floating power supply. |
Shenzhen Bardeen Microelectronics(BDM) CO.,LTD reserves the right to make corrections, modifications, enhancements, improvements, and other changes to its products and to discontinue any product without notice at any time. BDM cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a BDM product. No circuit patent licenses are implied.
Address: Building B, Unit B616, HuaShengTai Technology Tower, No.36 Hangkong Road, Sanwei Community, Hangcheng Street, Baoan District, Shenzhen
Tel: 86-755-23505821
Web: http://www.bdasic.com
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Bardeen Micro BDR6301 high voltage gate driver IC with level shifting and pulse filtering features Images |